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- Delnummer:
- IPD80R1K4CEBTMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 800V 3.9A TO252-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR, Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - Singel, Dioder - Bridge likerettere, Tyristorer - SCR-er - moduler, Tyristorer - TRIAC, Transistorer - IGBT-er - Arrays and Dioder - likerettere - matriser ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPD80R1K4CEBTMA1 electronic components. IPD80R1K4CEBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD80R1K4CEBTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD80R1K4CEBTMA1 Produktegenskaper
Delnummer :
IPD80R1K4CEBTMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 800V 3.9A TO252-3
Serie :
CoolMOS™
Delstatus :
Discontinued at Digi-Key
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1.4 Ohm @ 2.3A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 240µA
Gate Lading (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
570pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
63W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
TO-252-3
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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