IPG20N06S4L11ATMA1 Priser (USD) [101237stk Lager]
- 1 pcs$0.38623
- 5,000 pcs$0.29805
- Delnummer:
- IPG20N06S4L11ATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET 2N-CH 8TDSON.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Dioder - Bridge likerettere, Dioder - RF, Tyristorer - SCR, Transistorer - FET, MOSFET - En, Dioder - Variabel kapasitet (Varicaps, Varactors), Tyristorer - DIAC, SIDAC and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPG20N06S4L11ATMA1 electronic components. IPG20N06S4L11ATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N06S4L11ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPG20N06S4L11ATMA1 Produktegenskaper
Delnummer :
IPG20N06S4L11ATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET 2N-CH 8TDSON
Serie :
Automotive, AEC-Q101, OptiMOS™
Delstatus :
Active
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
20A
Rds On (Max) @ Id, vgs :
11.2 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 28µA
Gate Lading (Qg) (Max) @ Vgs :
53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
4020pF @ 25V
Kraft - Maks :
65W
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-PowerVDFN
Leverandørenhetspakke :
PG-TDSON-8-4
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