Infineon Technologies - BCR133E6327HTSA1

KEY Part #: K6528406

BCR133E6327HTSA1 Priser (USD) [2380284stk Lager]

  • 1 pcs$0.01554
  • 3,000 pcs$0.01408
  • 6,000 pcs$0.01270
  • 15,000 pcs$0.01105
  • 30,000 pcs$0.00994
  • 75,000 pcs$0.00884
  • 150,000 pcs$0.00736

Delnummer:
BCR133E6327HTSA1
Produsent:
Infineon Technologies
Detaljert beskrivelse:
TRANS PREBIAS NPN 200MW SOT23-3.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - singel, Tyristorer - DIAC, SIDAC, Dioder - Zener - Arrays, Transistorer - FET, MOSFET - Arrays, Transistorer - FET, MOSFET - RF, Tyristorer - TRIAC, Transistorer - Bipolar (BJT) - Arrays, pre-partisk and Transistorer - JFET-er ...
Konkurransefordel:
We specialize in Infineon Technologies BCR133E6327HTSA1 electronic components. BCR133E6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BCR133E6327HTSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BCR133E6327HTSA1 Produktegenskaper

Delnummer : BCR133E6327HTSA1
Produsent : Infineon Technologies
Beskrivelse : TRANS PREBIAS NPN 200MW SOT23-3
Serie : -
Delstatus : Last Time Buy
Transistortype : NPN - Pre-Biased
Nåværende - Samler (Ic) (Maks) : 100mA
Spenning - Samlebrenningens nedbrytning (maks) : 50V
Motstand - base (R1) : 10 kOhms
Motstand - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
Nåværende - Collector Cutoff (Max) : 100nA (ICBO)
Frekvens - overgang : 130MHz
Kraft - Maks : 200mW
Monteringstype : Surface Mount
Pakke / sak : TO-236-3, SC-59, SOT-23-3
Leverandørenhetspakke : SOT-23-3

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