VS-GB600AH120N Priser (USD) [359stk Lager]
- 1 pcs$129.08969
- 12 pcs$105.88785
- Delnummer:
- VS-GB600AH120N
- Produsent:
- Vishay Semiconductor Diodes Division
- Detaljert beskrivelse:
- IGBT 1200V 910A 3125W INT-A-PAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - IGBT-er - moduler, Dioder - likerettere - matriser, Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - FET, MOSFET - Arrays and Dioder - Zener - Singel ...
- Konkurransefordel:
- We specialize in Vishay Semiconductor Diodes Division VS-GB600AH120N electronic components. VS-GB600AH120N can be shipped within 24 hours after order. If you have any demands for VS-GB600AH120N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GB600AH120N Produktegenskaper
Delnummer :
VS-GB600AH120N
Produsent :
Vishay Semiconductor Diodes Division
Beskrivelse :
IGBT 1200V 910A 3125W INT-A-PAK
Serie :
-
Delstatus :
Active
IGBT-type :
-
konfigurasjon :
Single
Spenning - Samlebrenningens nedbrytning (maks) :
1200V
Nåværende - Samler (Ic) (Maks) :
910A
Kraft - Maks :
3125W
Vce (på) (Max) @ Vge, Ic :
1.9V @ 15V, 600A (Typ)
Nåværende - Collector Cutoff (Max) :
5mA
Input Capacitance (Cies) @ Vce :
41nF @ 25V
Input :
Standard
NTC Thermistor :
No
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Chassis Mount
Pakke / sak :
Double INT-A-PAK (5)
Leverandørenhetspakke :
Double INT-A-PAK
Siste nytt
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