Microsemi Corporation - APTGT50X60T3G

KEY Part #: K6532540

APTGT50X60T3G Priser (USD) [1678stk Lager]

  • 1 pcs$26.77411
  • 10 pcs$25.20120
  • 25 pcs$23.62589
  • 100 pcs$22.52338

Delnummer:
APTGT50X60T3G
Produsent:
Microsemi Corporation
Detaljert beskrivelse:
IGBT TRENCH 3PHASE BRIDGE SP3.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Variabel kapasitet (Varicaps, Varactors), Power Driver-moduler, Dioder - RF, Transistorer - JFET-er, Transistorer - FET, MOSFET - RF, Tyristorer - DIAC, SIDAC, Tyristorer - SCR and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
Konkurransefordel:
We specialize in Microsemi Corporation APTGT50X60T3G electronic components. APTGT50X60T3G can be shipped within 24 hours after order. If you have any demands for APTGT50X60T3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTGT50X60T3G Produktegenskaper

Delnummer : APTGT50X60T3G
Produsent : Microsemi Corporation
Beskrivelse : IGBT TRENCH 3PHASE BRIDGE SP3
Serie : -
Delstatus : Active
IGBT-type : Trench Field Stop
konfigurasjon : Three Phase Inverter
Spenning - Samlebrenningens nedbrytning (maks) : 600V
Nåværende - Samler (Ic) (Maks) : 80A
Kraft - Maks : 176W
Vce (på) (Max) @ Vge, Ic : 1.9V @ 15V, 50A
Nåværende - Collector Cutoff (Max) : 250µA
Input Capacitance (Cies) @ Vce : 3.15nF @ 25V
Input : Standard
NTC Thermistor : Yes
Driftstemperatur : -40°C ~ 175°C (TJ)
Monteringstype : Chassis Mount
Pakke / sak : SP3
Leverandørenhetspakke : SP3

Du kan også være interessert i
  • VS-ENQ030L120S

    Vishay Semiconductor Diodes Division

    IGBT 1200V 61A 216W EMIPAK-1B. Rectifiers 30A Neutral Point Clamp Topology

  • VS-ETF150Y65N

    Vishay Semiconductor Diodes Division

    IGBT 650V 150A EMIPAK-2B.

  • CPV362M4F

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 8.8A IMS-2.

  • CPV363M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6A IMS-2.

  • A2C35S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 35A ACEPACK2.

  • A2C25S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 25A ACEPACK2.