DF200R12W1H3B27BOMA1 Priser (USD) [1809stk Lager]
- 1 pcs$23.94315
- Delnummer:
- DF200R12W1H3B27BOMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- IGBT MODULE VCES 1200V 200A.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - En, Tyristorer - SCR, Dioder - RF, Transistorer - FET, MOSFET - RF, Transistorer - FET, MOSFET - Arrays, Transistorer - IGBT-er - moduler, Transistorer - IGBT-er - singel and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
- Konkurransefordel:
- We specialize in Infineon Technologies DF200R12W1H3B27BOMA1 electronic components. DF200R12W1H3B27BOMA1 can be shipped within 24 hours after order. If you have any demands for DF200R12W1H3B27BOMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DF200R12W1H3B27BOMA1 Produktegenskaper
Delnummer :
DF200R12W1H3B27BOMA1
Produsent :
Infineon Technologies
Beskrivelse :
IGBT MODULE VCES 1200V 200A
Serie :
-
Delstatus :
Active
IGBT-type :
-
konfigurasjon :
2 Independent
Spenning - Samlebrenningens nedbrytning (maks) :
1200V
Nåværende - Samler (Ic) (Maks) :
30A
Kraft - Maks :
375W
Vce (på) (Max) @ Vge, Ic :
1.3V @ 15V, 30A
Nåværende - Collector Cutoff (Max) :
1mA
Input Capacitance (Cies) @ Vce :
2nF @ 25V
Input :
Standard
NTC Thermistor :
Yes
Driftstemperatur :
-40°C ~ 150°C
Monteringstype :
Chassis Mount
Pakke / sak :
Module
Leverandørenhetspakke :
Module
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