Vishay Semiconductor Diodes Division - UHB10FT-E3/8W

KEY Part #: K6456443

UHB10FT-E3/8W Priser (USD) [116617stk Lager]

  • 1 pcs$0.31717
  • 800 pcs$0.29706

Delnummer:
UHB10FT-E3/8W
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
DIODE GEN PURP 300V 10A D2PAK.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - TRIAC, Transistorer - FET, MOSFET - Arrays, Transistorer - IGBT-er - moduler, Power Driver-moduler, Tyristorer - SCR-er - moduler, Transistorer - programmerbar enhet, Transistorer - FET, MOSFET - RF and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division UHB10FT-E3/8W electronic components. UHB10FT-E3/8W can be shipped within 24 hours after order. If you have any demands for UHB10FT-E3/8W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UHB10FT-E3/8W Produktegenskaper

Delnummer : UHB10FT-E3/8W
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 300V 10A D2PAK
Serie : -
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 300V
Nåværende - Gjennomsnittlig rettet (Io) : 10A
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.2V @ 10A
Hastighet : Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 35ns
Nåværende - Omvendt lekkasje @ Vr : 5µA @ 300V
Capacitance @ Vr, F : -
Monteringstype : Surface Mount
Pakke / sak : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Leverandørenhetspakke : D2PAK
Driftstemperatur - veikryss : -55°C ~ 175°C

Du kan også være interessert i
  • SL03-GS08

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 30V 1.1A DO219AB. Schottky Diodes & Rectifiers 1.1A .395V

  • FESB8DTHE3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 8A TO263AB. Rectifiers 200 Volt 8.0A 35ns Single

  • BYWB29-100HE3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 8A TO263AB. Rectifiers 100 Volt 8.0A 25ns Single Glass Pass

  • BYWB29-200HE3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 8A TO263AB. Rectifiers 200 Volt 8.0A 25ns Single Glass Pass

  • BYWB29-50HE3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 8A TO263AB. Rectifiers 50 Volt 8.0A 25ns Single Glass Pass

  • BYWB29-150HE3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 150V 8A TO263AB. Rectifiers 150 Volt 8.0A 25ns Single Glass Pass