GeneSiC Semiconductor - GB2X100MPS12-227

KEY Part #: K6469821

GB2X100MPS12-227 Priser (USD) [629stk Lager]

  • 1 pcs$73.79442

Delnummer:
GB2X100MPS12-227
Produsent:
GeneSiC Semiconductor
Detaljert beskrivelse:
SIC DIODE 1200V 200A SOT-227. Schottky Diodes & Rectifiers Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 200A SOT-227
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - moduler, Dioder - Bridge likerettere, Transistorer - IGBT-er - singel, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Power Driver-moduler, Transistorer - FET, MOSFET - Arrays and Tyristorer - DIAC, SIDAC ...
Konkurransefordel:
We specialize in GeneSiC Semiconductor GB2X100MPS12-227 electronic components. GB2X100MPS12-227 can be shipped within 24 hours after order. If you have any demands for GB2X100MPS12-227, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GB2X100MPS12-227 Produktegenskaper

Delnummer : GB2X100MPS12-227
Produsent : GeneSiC Semiconductor
Beskrivelse : SIC DIODE 1200V 200A SOT-227
Serie : -
Delstatus : Active
Diodekonfigurasjon : 2 Independent
Diodetype : Silicon Carbide Schottky
Spenning - DC Reverse (Vr) (Max) : 1200V
Nåværende - Gjennomsnittlig rettet (Io) (per diode) : 185A (DC)
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.8V @ 100A
Hastighet : No Recovery Time > 500mA (Io)
Omvendt gjenopprettingstid (trr) : 0ns
Nåværende - Omvendt lekkasje @ Vr : 80µA @ 1200V
Driftstemperatur - veikryss : -55°C ~ 175°C
Monteringstype : Chassis Mount
Pakke / sak : SOT-227-4, miniBLOC
Leverandørenhetspakke : SOT-227
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