IPD65R650CEATMA1 Priser (USD) [2905stk Lager]
- 2,500 pcs$0.14383
- Delnummer:
- IPD65R650CEATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 650V 10.1A TO252.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Dioder - RF, Dioder - Zener - Singel, Transistorer - FET, MOSFET - En, Transistorer - spesialformål, Dioder - likerettere - singel, Transistorer - programmerbar enhet and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPD65R650CEATMA1 electronic components. IPD65R650CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPD65R650CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD65R650CEATMA1 Produktegenskaper
Delnummer :
IPD65R650CEATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 650V 10.1A TO252
Serie :
CoolMOS™
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
10.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
650 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 0.21mA
Gate Lading (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 100V
FET-funksjon :
Super Junction
Effektdissipasjon (maks) :
86W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO252-3
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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