SIB410DK-T1-GE3 Priser (USD) [2480stk Lager]
- 3,000 pcs$0.07418
- Delnummer:
- SIB410DK-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 30V 9A 8SO.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Power Driver-moduler, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - RF, Dioder - Zener - Arrays, Transistorer - JFET-er and Dioder - Zener - Singel ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SIB410DK-T1-GE3 electronic components. SIB410DK-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIB410DK-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIB410DK-T1-GE3 Produktegenskaper
Delnummer :
SIB410DK-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 30V 9A 8SO
Serie :
TrenchFET®
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, vgs :
42 mOhm @ 3.8A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
15nC @ 8V
Vgs (maks) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
560pF @ 15V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.5W (Ta), 13W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PowerPAK® SC-75-6L Single
Pakke / sak :
PowerPAK® SC-75-6L
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