IRF6775MTRPBF Priser (USD) [99089stk Lager]
- 1 pcs$0.51375
- 4,800 pcs$0.51119
- Delnummer:
- IRF6775MTRPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 150V 4.9A DIRECTFET.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Dioder - likerettere - singel, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - IGBT-er - Arrays, Tyristorer - SCR-er - moduler, Dioder - likerettere - matriser, Transistorer - IGBT-er - moduler and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF6775MTRPBF electronic components. IRF6775MTRPBF can be shipped within 24 hours after order. If you have any demands for IRF6775MTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6775MTRPBF Produktegenskaper
Delnummer :
IRF6775MTRPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 150V 4.9A DIRECTFET
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
150V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
4.9A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
56 mOhm @ 5.6A, 10V
Vgs (th) (Max) @ Id :
5V @ 100µA
Gate Lading (Qg) (Max) @ Vgs :
36nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1411pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.8W (Ta), 89W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
DIRECTFET™ MZ
Pakke / sak :
DirectFET™ Isometric MZ
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