IRFS3207ZTRRPBF Priser (USD) [54367stk Lager]
- 1 pcs$0.71919
- 800 pcs$0.69042
- Delnummer:
- IRFS3207ZTRRPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 75V 120A D2PAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - RF, Dioder - likerettere - singel, Transistorer - IGBT-er - singel and Tyristorer - DIAC, SIDAC ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFS3207ZTRRPBF electronic components. IRFS3207ZTRRPBF can be shipped within 24 hours after order. If you have any demands for IRFS3207ZTRRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFS3207ZTRRPBF Produktegenskaper
Delnummer :
IRFS3207ZTRRPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 75V 120A D2PAK
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
75V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
4.1 mOhm @ 75A, 10V
Vgs (th) (Max) @ Id :
4V @ 150µA
Gate Lading (Qg) (Max) @ Vgs :
170nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6920pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
300W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D²PAK (TO-263)
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Siste nytt
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