EGF1DHE3_A/H Priser (USD) [460696stk Lager]
- 1 pcs$0.08029
- Delnummer:
- EGF1DHE3_A/H
- Produsent:
- Vishay Semiconductor Diodes Division
- Detaljert beskrivelse:
- DIODE GEN PURP 200V 1A DO214BA. Rectifiers 1A,200V,50NS AEC-Q101 Qualified
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Transistorer - IGBT-er - singel, Dioder - Zener - Arrays, Transistorer - programmerbar enhet, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Arrays, pre-partisk and Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor ...
- Konkurransefordel:
- We specialize in Vishay Semiconductor Diodes Division EGF1DHE3_A/H electronic components. EGF1DHE3_A/H can be shipped within 24 hours after order. If you have any demands for EGF1DHE3_A/H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EGF1DHE3_A/H Produktegenskaper
Delnummer :
EGF1DHE3_A/H
Produsent :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 200V 1A DO214BA
Serie :
Automotive, AEC-Q101, Superectifier®
Delstatus :
Active
Diodetype :
Standard
Spenning - DC Reverse (Vr) (Max) :
200V
Nåværende - Gjennomsnittlig rettet (Io) :
1A
Spenning - Fremover (Vf) (Maks) @ Hvis :
1V @ 1A
Hastighet :
Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) :
50ns
Nåværende - Omvendt lekkasje @ Vr :
2µA @ 200V
Capacitance @ Vr, F :
15pF @ 4V, 1MHz
Monteringstype :
Surface Mount
Pakke / sak :
DO-214BA
Leverandørenhetspakke :
DO-214BA (GF1)
Driftstemperatur - veikryss :
-65°C ~ 175°C
Siste nytt
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