Delnummer :
RN1109MFV,L3F
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
TRANS PREBIAS NPN 50V 500NA VESM
Transistortype :
NPN - Pre-Biased
Nåværende - Samler (Ic) (Maks) :
100mA
Spenning - Samlebrenningens nedbrytning (maks) :
50V
Motstand - base (R1) :
47 kOhms
Motstand - Emitter Base (R2) :
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Nåværende - Collector Cutoff (Max) :
500nA
Monteringstype :
Surface Mount
Leverandørenhetspakke :
VESM