Vishay Semiconductor Diodes Division - GP10N-E3/54

KEY Part #: K6458303

GP10N-E3/54 Priser (USD) [1050801stk Lager]

  • 1 pcs$0.03520
  • 11,000 pcs$0.03219

Delnummer:
GP10N-E3/54
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
DIODE GEN PURP 1.1KV 1A DO204AL. Rectifiers 1100 Volt 1.0 Amp 25 Amp IFSM
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - moduler, Transistorer - spesialformål, Transistorer - programmerbar enhet, Transistorer - JFET-er, Dioder - Zener - Arrays, Dioder - likerettere - matriser, Transistorer - FET, MOSFET - RF and Transistorer - Bipolar (BJT) - Singel ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division GP10N-E3/54 electronic components. GP10N-E3/54 can be shipped within 24 hours after order. If you have any demands for GP10N-E3/54, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GP10N-E3/54 Produktegenskaper

Delnummer : GP10N-E3/54
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 1.1KV 1A DO204AL
Serie : SUPERECTIFIER®
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 1100V
Nåværende - Gjennomsnittlig rettet (Io) : 1A
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.2V @ 1A
Hastighet : Standard Recovery >500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 3µs
Nåværende - Omvendt lekkasje @ Vr : 5µA @ 1100V
Capacitance @ Vr, F : 7pF @ 4V, 1MHz
Monteringstype : Through Hole
Pakke / sak : DO-204AL, DO-41, Axial
Leverandørenhetspakke : DO-204AL (DO-41)
Driftstemperatur - veikryss : -65°C ~ 150°C

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