Microsemi Corporation - JANTXV1N6317US

KEY Part #: K6479705

JANTXV1N6317US Priser (USD) [200stk Lager]

  • 1 pcs$221.50260

Delnummer:
JANTXV1N6317US
Produsent:
Microsemi Corporation
Detaljert beskrivelse:
DIODE ZENER 5.1V 500MW B-SQ MELF.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - RF, Transistorer - FET, MOSFET - En, Dioder - Zener - Singel, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - Bipolar (BJT) - Singel, Dioder - likerettere - singel and Tyristorer - TRIAC ...
Konkurransefordel:
We specialize in Microsemi Corporation JANTXV1N6317US electronic components. JANTXV1N6317US can be shipped within 24 hours after order. If you have any demands for JANTXV1N6317US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JANTXV1N6317US Produktegenskaper

Delnummer : JANTXV1N6317US
Produsent : Microsemi Corporation
Beskrivelse : DIODE ZENER 5.1V 500MW B-SQ MELF
Serie : Military, MIL-PRF-19500/533
Delstatus : Discontinued at Digi-Key
Spenning - Zener (Nom) (Vz) : 5.1V
Toleranse : ±5%
Kraft - Maks : 500mW
Impedans (maks) (Zzt) : 1300 Ohms
Nåværende - Omvendt lekkasje @ Vr : 5µA @ 2V
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.4V @ 1A
Driftstemperatur : -65°C ~ 175°C
Monteringstype : Surface Mount
Pakke / sak : SQ-MELF, B
Leverandørenhetspakke : B, SQ-MELF

Du kan også være interessert i
  • BAW156E6327HTSA1

    Infineon Technologies

    DIODE ARRAY GP 80V 200MA SOT23. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • MMBD1705A

    ON Semiconductor

    DIODE ARRAY GP 30V 50MA SOT23-3.

  • SMBD7000E6327HTSA1

    Infineon Technologies

    DIODE ARRAY GP 100V 200MA SOT23. Diodes - General Purpose, Power, Switching AF DIODE 100V 0.2A

  • 1SS181,LF

    Toshiba Semiconductor and Storage

    DIODE ARRAY GP 80V 100MA SC59. Diodes - General Purpose, Power, Switching Hi Spd Switch Diode 0.1A 80V VR

  • BAV170E6433HTMA1

    Infineon Technologies

    DIODE ARRAY GP 80V 200MA SOT23. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode Array

  • BAV70E6433HTMA1

    Infineon Technologies

    DIODE ARRAY GP 80V 200MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode 200mA