RN1413(TE85L,F) Priser (USD) [3175599stk Lager]
- 1 pcs$0.01171
- 3,000 pcs$0.01165
- 6,000 pcs$0.01051
- 15,000 pcs$0.00914
- 30,000 pcs$0.00822
- 75,000 pcs$0.00731
- 150,000 pcs$0.00609
- Delnummer:
- RN1413(TE85L,F)
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- TRANS PREBIAS NPN 0.2W SMINI.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - Bridge likerettere, Transistorer - Bipolar (BJT) - Singel, Transistorer - spesialformål, Power Driver-moduler, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Tyristorer - DIAC, SIDAC and Transistorer - Bipolar (BJT) - RF ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage RN1413(TE85L,F) electronic components. RN1413(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN1413(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1413(TE85L,F) Produktegenskaper
Delnummer :
RN1413(TE85L,F)
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
TRANS PREBIAS NPN 0.2W SMINI
Serie :
-
Delstatus :
Active
Transistortype :
NPN - Pre-Biased
Nåværende - Samler (Ic) (Maks) :
100mA
Spenning - Samlebrenningens nedbrytning (maks) :
50V
Motstand - base (R1) :
47 kOhms
Motstand - Emitter Base (R2) :
-
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Nåværende - Collector Cutoff (Max) :
100nA (ICBO)
Frekvens - overgang :
250MHz
Kraft - Maks :
200mW
Monteringstype :
Surface Mount
Pakke / sak :
TO-236-3, SC-59, SOT-23-3
Leverandørenhetspakke :
S-Mini
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