FQD8P10TM Priser (USD) [232252stk Lager]
- 1 pcs$0.15926
- 2,500 pcs$0.15165
- Delnummer:
- FQD8P10TM
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET P-CH 100V 6.6A DPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - JFET-er, Dioder - Zener - Singel, Dioder - Bridge likerettere, Tyristorer - SCR, Power Driver-moduler, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - IGBT-er - singel and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurransefordel:
- We specialize in ON Semiconductor FQD8P10TM electronic components. FQD8P10TM can be shipped within 24 hours after order. If you have any demands for FQD8P10TM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQD8P10TM Produktegenskaper
Delnummer :
FQD8P10TM
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET P-CH 100V 6.6A DPAK
Serie :
QFET®
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
530 mOhm @ 3.3A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
470pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.5W (Ta), 44W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D-Pak
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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