IPAW60R360P7SXKSA1 Priser (USD) [72496stk Lager]
- 1 pcs$0.55189
- 10 pcs$0.48918
- 100 pcs$0.38670
- 500 pcs$0.28368
- 1,000 pcs$0.22396
- Delnummer:
- IPAW60R360P7SXKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CHANNEL 650V 9A TO220.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - spesialformål, Dioder - likerettere - singel, Transistorer - Bipolar (BJT) - Arrays, Dioder - RF, Dioder - Zener - Arrays, Dioder - Variabel kapasitet (Varicaps, Varactors), Dioder - likerettere - matriser and Transistorer - Bipolar (BJT) - Singel ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPAW60R360P7SXKSA1 electronic components. IPAW60R360P7SXKSA1 can be shipped within 24 hours after order. If you have any demands for IPAW60R360P7SXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPAW60R360P7SXKSA1 Produktegenskaper
Delnummer :
IPAW60R360P7SXKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CHANNEL 650V 9A TO220
Serie :
CoolMOS™ P7
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
360 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ Id :
4V @ 140µA
Gate Lading (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
555pF @ 400V
FET-funksjon :
-
Effektdissipasjon (maks) :
22W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO220 Full Pack
Pakke / sak :
TO-220-3 Full Pack
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