IPG16N10S4L61AATMA1 Priser (USD) [228629stk Lager]
- 1 pcs$0.16178
- 5,000 pcs$0.14842
- Delnummer:
- IPG16N10S4L61AATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET 2N-CH 8TDSON.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - TRIAC, Transistorer - spesialformål, Transistorer - IGBT-er - singel, Tyristorer - SCR, Transistorer - JFET-er, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor and Tyristorer - DIAC, SIDAC ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPG16N10S4L61AATMA1 electronic components. IPG16N10S4L61AATMA1 can be shipped within 24 hours after order. If you have any demands for IPG16N10S4L61AATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPG16N10S4L61AATMA1 Produktegenskaper
Delnummer :
IPG16N10S4L61AATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET 2N-CH 8TDSON
Serie :
Automotive, AEC-Q101, OptiMOS™
Delstatus :
Active
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
16A
Rds On (Max) @ Id, vgs :
61 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 90µA
Gate Lading (Qg) (Max) @ Vgs :
11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
845pF @ 25V
Kraft - Maks :
29W
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-PowerVDFN
Leverandørenhetspakke :
PG-TDSON-8-10
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