IPI045N10N3GXKSA1 Priser (USD) [26270stk Lager]
- 1 pcs$1.56889
- Delnummer:
- IPI045N10N3GXKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 100V 100A TO262-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - IGBT-er - moduler, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - Bipolar (BJT) - RF, Tyristorer - SCR, Transistorer - FET, MOSFET - En and Dioder - RF ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPI045N10N3GXKSA1 electronic components. IPI045N10N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPI045N10N3GXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI045N10N3GXKSA1 Produktegenskaper
Delnummer :
IPI045N10N3GXKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 100V 100A TO262-3
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, vgs :
4.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 150µA
Gate Lading (Qg) (Max) @ Vgs :
117nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
8410pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
214W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO262-3
Pakke / sak :
TO-262-3 Long Leads, I²Pak, TO-262AA
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