Toshiba Semiconductor and Storage - RN1115,LF(CT

KEY Part #: K6526354

RN1115,LF(CT Priser (USD) [2581325stk Lager]

  • 1 pcs$0.01440
  • 3,000 pcs$0.01433
  • 6,000 pcs$0.01246
  • 15,000 pcs$0.01059
  • 30,000 pcs$0.00997
  • 75,000 pcs$0.00935
  • 150,000 pcs$0.00831

Delnummer:
RN1115,LF(CT
Produsent:
Toshiba Semiconductor and Storage
Detaljert beskrivelse:
TRANS PREBIAS NPN 0.1W SSM.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - DIAC, SIDAC, Transistorer - FET, MOSFET - En, Power Driver-moduler, Transistorer - FET, MOSFET - Arrays, Dioder - Bridge likerettere, Tyristorer - SCR, Transistorer - Bipolar (BJT) - Arrays and Transistorer - JFET-er ...
Konkurransefordel:
We specialize in Toshiba Semiconductor and Storage RN1115,LF(CT electronic components. RN1115,LF(CT can be shipped within 24 hours after order. If you have any demands for RN1115,LF(CT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN1115,LF(CT Produktegenskaper

Delnummer : RN1115,LF(CT
Produsent : Toshiba Semiconductor and Storage
Beskrivelse : TRANS PREBIAS NPN 0.1W SSM
Serie : -
Delstatus : Active
Transistortype : NPN - Pre-Biased
Nåværende - Samler (Ic) (Maks) : 100mA
Spenning - Samlebrenningens nedbrytning (maks) : 50V
Motstand - base (R1) : 2.2 kOhms
Motstand - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Nåværende - Collector Cutoff (Max) : 500nA
Frekvens - overgang : 250MHz
Kraft - Maks : 100mW
Monteringstype : Surface Mount
Pakke / sak : SC-75, SOT-416
Leverandørenhetspakke : SSM

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