STI6N80K5 Priser (USD) [72767stk Lager]
- 1 pcs$0.53734
- 1,000 pcs$0.48015
- Delnummer:
- STI6N80K5
- Produsent:
- STMicroelectronics
- Detaljert beskrivelse:
- MOSFET N-CH 800V 4.5A I2PAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - Variabel kapasitet (Varicaps, Varactors), Dioder - RF, Power Driver-moduler, Transistorer - Bipolar (BJT) - Arrays, Dioder - likerettere - matriser, Transistorer - IGBT-er - moduler and Transistorer - IGBT-er - singel ...
- Konkurransefordel:
- We specialize in STMicroelectronics STI6N80K5 electronic components. STI6N80K5 can be shipped within 24 hours after order. If you have any demands for STI6N80K5, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STI6N80K5 Produktegenskaper
Delnummer :
STI6N80K5
Produsent :
STMicroelectronics
Beskrivelse :
MOSFET N-CH 800V 4.5A I2PAK
Serie :
SuperMESH5™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1.6 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
5V @ 100µA
Gate Lading (Qg) (Max) @ Vgs :
7.5nC @ 10V
Vgs (maks) :
30V
Input Capacitance (Ciss) (Max) @ Vds :
255pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
85W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
I2PAK (TO-262)
Pakke / sak :
TO-262-3 Long Leads, I²Pak, TO-262AA
Siste nytt
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