R8002ANJFRGTL Priser (USD) [85268stk Lager]
- 1 pcs$0.45856
- Delnummer:
- R8002ANJFRGTL
- Produsent:
- Rohm Semiconductor
- Detaljert beskrivelse:
- R8002ANJ FRG IS A POWER MOSFET W.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Power Driver-moduler, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - Bipolar (BJT) - Arrays, Tyristorer - SCR-er - moduler, Transistorer - IGBT-er - Arrays, Transistorer - FET, MOSFET - RF, Tyristorer - TRIAC and Transistorer - Bipolar (BJT) - Singel ...
- Konkurransefordel:
- We specialize in Rohm Semiconductor R8002ANJFRGTL electronic components. R8002ANJFRGTL can be shipped within 24 hours after order. If you have any demands for R8002ANJFRGTL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
R8002ANJFRGTL Produktegenskaper
Delnummer :
R8002ANJFRGTL
Produsent :
Rohm Semiconductor
Beskrivelse :
R8002ANJ FRG IS A POWER MOSFET W
Serie :
Automotive, AEC-Q101
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
4.3 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
5V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
250pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
62W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
LPTS
Pakke / sak :
SC-83
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