Vishay Semiconductor Diodes Division - RS1J-E3/5AT

KEY Part #: K6433575

RS1J-E3/5AT Priser (USD) [1248449stk Lager]

  • 1 pcs$0.02963
  • 7,500 pcs$0.02504
  • 15,000 pcs$0.02226
  • 37,500 pcs$0.02087
  • 52,500 pcs$0.01855

Delnummer:
RS1J-E3/5AT
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
DIODE GEN PURP 600V 1A DO214AC.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR, Tyristorer - DIAC, SIDAC, Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Tyristorer - SCR-er - moduler, Transistorer - IGBT-er - Arrays, Dioder - Zener - Arrays and Dioder - likerettere - matriser ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division RS1J-E3/5AT electronic components. RS1J-E3/5AT can be shipped within 24 hours after order. If you have any demands for RS1J-E3/5AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RS1J-E3/5AT Produktegenskaper

Delnummer : RS1J-E3/5AT
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 600V 1A DO214AC
Serie : -
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 600V
Nåværende - Gjennomsnittlig rettet (Io) : 1A
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.3V @ 1A
Hastighet : Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 250ns
Nåværende - Omvendt lekkasje @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 7pF @ 4V, 1MHz
Monteringstype : Surface Mount
Pakke / sak : DO-214AC, SMA
Leverandørenhetspakke : DO-214AC (SMA)
Driftstemperatur - veikryss : -55°C ~ 150°C

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