IXFN50N120SIC Priser (USD) [1520stk Lager]
- 1 pcs$28.47998
- Delnummer:
- IXFN50N120SIC
- Produsent:
- IXYS
- Detaljert beskrivelse:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR-er - moduler, Transistorer - programmerbar enhet, Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - JFET-er, Transistorer - spesialformål, Transistorer - IGBT-er - Arrays and Transistorer - FET, MOSFET - Arrays ...
- Konkurransefordel:
- We specialize in IXYS IXFN50N120SIC electronic components. IXFN50N120SIC can be shipped within 24 hours after order. If you have any demands for IXFN50N120SIC, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN50N120SIC Produktegenskaper
Delnummer :
IXFN50N120SIC
Produsent :
IXYS
Beskrivelse :
MOSFET N-CH
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
SiC (Silicon Carbide Junction Transistor)
Drenering til kildespenning (Vdss) :
1200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
20V
Rds On (Max) @ Id, vgs :
50 mOhm @ 40A, 20V
Vgs (th) (Max) @ Id :
2.2V @ 2mA
Gate Lading (Qg) (Max) @ Vgs :
100nC @ 20V
Vgs (maks) :
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds :
1900pF @ 1000V
FET-funksjon :
-
Effektdissipasjon (maks) :
-
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Chassis Mount
Leverandørenhetspakke :
SOT-227B
Pakke / sak :
SOT-227-4, miniBLOC
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