IRFR1010ZPBF Priser (USD) [13620stk Lager]
- 1 pcs$0.70659
- 10 pcs$0.62631
- 100 pcs$0.49486
- 500 pcs$0.38378
- 1,000 pcs$0.28661
- Delnummer:
- IRFR1010ZPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 55V 42A DPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Arrays, Transistorer - IGBT-er - moduler, Transistorer - spesialformål, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - JFET-er, Transistorer - FET, MOSFET - Arrays, Tyristorer - SCR and Transistorer - IGBT-er - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFR1010ZPBF electronic components. IRFR1010ZPBF can be shipped within 24 hours after order. If you have any demands for IRFR1010ZPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFR1010ZPBF Produktegenskaper
Delnummer :
IRFR1010ZPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 55V 42A DPAK
Serie :
HEXFET®
Delstatus :
Discontinued at Digi-Key
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
55V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
7.5 mOhm @ 42A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Gate Lading (Qg) (Max) @ Vgs :
95nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2840pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
140W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D-Pak
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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