IPA093N06N3GXKSA1 Priser (USD) [76655stk Lager]
- 1 pcs$0.48918
- 10 pcs$0.43441
- 100 pcs$0.32486
- 500 pcs$0.25195
- 1,000 pcs$0.19890
- Delnummer:
- IPA093N06N3GXKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 60V 43A TO220-3-31.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Transistorer - Bipolar (BJT) - Singel, Transistorer - FET, MOSFET - En, Tyristorer - DIAC, SIDAC, Transistorer - IGBT-er - moduler, Transistorer - JFET-er, Dioder - likerettere - matriser and Transistorer - spesialformål ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPA093N06N3GXKSA1 electronic components. IPA093N06N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPA093N06N3GXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPA093N06N3GXKSA1 Produktegenskaper
Delnummer :
IPA093N06N3GXKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 60V 43A TO220-3-31
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
9.3 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
4V @ 34µA
Gate Lading (Qg) (Max) @ Vgs :
48nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 30V
FET-funksjon :
-
Effektdissipasjon (maks) :
33W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO220-3-31 Full Pack
Pakke / sak :
TO-220-3 Full Pack
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