[1224stk Lager]
- Delnummer:
- TK40P03M1(T6RSS-Q)
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 30V 40A 3DP 2-7K1A.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - Arrays, Dioder - Zener - Singel, Transistorer - spesialformål, Transistorer - FET, MOSFET - En, Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Arrays, Transistorer - IGBT-er - Arrays and Dioder - RF ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK40P03M1(T6RSS-Q) electronic components. TK40P03M1(T6RSS-Q) can be shipped within 24 hours after order. If you have any demands for TK40P03M1(T6RSS-Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK40P03M1(T6RSS-Q) Produktegenskaper
Delnummer :
TK40P03M1(T6RSS-Q)
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 30V 40A 3DP 2-7K1A
Serie :
U-MOSVI-H
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
10.8 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 100µA
Gate Lading (Qg) (Max) @ Vgs :
17.5nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1150pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
-
Driftstemperatur :
-
Monteringstype :
Surface Mount
Leverandørenhetspakke :
DP
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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