IPB108N15N3GATMA1 Priser (USD) [39517stk Lager]
- 1 pcs$0.98944
- Delnummer:
- IPB108N15N3GATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 150V 83A TO263-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - Arrays, Tyristorer - SCR, Transistorer - IGBT-er - singel, Power Driver-moduler, Transistorer - JFET-er and Transistorer - FET, MOSFET - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPB108N15N3GATMA1 electronic components. IPB108N15N3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPB108N15N3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB108N15N3GATMA1 Produktegenskaper
Delnummer :
IPB108N15N3GATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 150V 83A TO263-3
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
150V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
8V, 10V
Rds On (Max) @ Id, vgs :
10.8 mOhm @ 83A, 10V
Vgs (th) (Max) @ Id :
4V @ 160µA
Gate Lading (Qg) (Max) @ Vgs :
55nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3230pF @ 75V
FET-funksjon :
-
Effektdissipasjon (maks) :
214W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D²PAK (TO-263AB)
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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