Vishay Semiconductor Diodes Division - VS-1EFH02HM3/I

KEY Part #: K6455314

VS-1EFH02HM3/I Priser (USD) [792956stk Lager]

  • 1 pcs$0.04665
  • 10,000 pcs$0.04227
  • 30,000 pcs$0.03887

Delnummer:
VS-1EFH02HM3/I
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
DIODE GEN PURP 200V 1A DO219AB. Rectifiers Hypfst Rct 1A 200V
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - likerettere - singel, Transistorer - programmerbar enhet, Transistorer - Bipolar (BJT) - RF, Transistorer - IGBT-er - singel, Tyristorer - DIAC, SIDAC, Transistorer - spesialformål, Dioder - Zener - Singel and Dioder - Zener - Arrays ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division VS-1EFH02HM3/I electronic components. VS-1EFH02HM3/I can be shipped within 24 hours after order. If you have any demands for VS-1EFH02HM3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-1EFH02HM3/I Produktegenskaper

Delnummer : VS-1EFH02HM3/I
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 200V 1A DO219AB
Serie : Automotive, AEC-Q101, FRED Pt®
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 200V
Nåværende - Gjennomsnittlig rettet (Io) : 1A
Spenning - Fremover (Vf) (Maks) @ Hvis : 930mV @ 1A
Hastighet : Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 25ns
Nåværende - Omvendt lekkasje @ Vr : 2µA @ 200V
Capacitance @ Vr, F : -
Monteringstype : Surface Mount
Pakke / sak : DO-219AB
Leverandørenhetspakke : DO-219AB (SMF)
Driftstemperatur - veikryss : -55°C ~ 175°C

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