TSM60NB600CH C5G Priser (USD) [66799stk Lager]
- 1 pcs$0.58534
- Delnummer:
- TSM60NB600CH C5G
- Produsent:
- Taiwan Semiconductor Corporation
- Detaljert beskrivelse:
- MOSFET N-CHANNEL 600V 7A TO251.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Arrays, Dioder - Bridge likerettere, Dioder - likerettere - singel, Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - IGBT-er - moduler, Power Driver-moduler and Transistorer - IGBT-er - Arrays ...
- Konkurransefordel:
- We specialize in Taiwan Semiconductor Corporation TSM60NB600CH C5G electronic components. TSM60NB600CH C5G can be shipped within 24 hours after order. If you have any demands for TSM60NB600CH C5G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM60NB600CH C5G Produktegenskaper
Delnummer :
TSM60NB600CH C5G
Produsent :
Taiwan Semiconductor Corporation
Beskrivelse :
MOSFET N-CHANNEL 600V 7A TO251
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
600 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
516pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
63W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-251 (IPAK)
Pakke / sak :
TO-251-3 Short Leads, IPak, TO-251AA
Siste nytt
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