IPW65R110CFDAFKSA1 Priser (USD) [10579stk Lager]
- 1 pcs$3.89579
- 240 pcs$2.66034
- Delnummer:
- IPW65R110CFDAFKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 650V 31.2A TO247.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Arrays, Transistorer - FET, MOSFET - En, Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Singel, Power Driver-moduler, Transistorer - programmerbar enhet, Tyristorer - SCR-er - moduler and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPW65R110CFDAFKSA1 electronic components. IPW65R110CFDAFKSA1 can be shipped within 24 hours after order. If you have any demands for IPW65R110CFDAFKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPW65R110CFDAFKSA1 Produktegenskaper
Delnummer :
IPW65R110CFDAFKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 650V 31.2A TO247
Serie :
Automotive, AEC-Q101, CoolMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
110 mOhm @ 12.7A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1.3mA
Gate Lading (Qg) (Max) @ Vgs :
118nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3240pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
277.8W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO247-3
Pakke / sak :
TO-247-3
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