HUF75329D3ST Priser (USD) [173708stk Lager]
- 1 pcs$0.21399
- 2,500 pcs$0.21293
- Delnummer:
- HUF75329D3ST
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 55V 20A DPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR-er - moduler, Tyristorer - DIAC, SIDAC, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Arrays, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Power Driver-moduler, Dioder - Bridge likerettere and Transistorer - Bipolar (BJT) - RF ...
- Konkurransefordel:
- We specialize in ON Semiconductor HUF75329D3ST electronic components. HUF75329D3ST can be shipped within 24 hours after order. If you have any demands for HUF75329D3ST, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HUF75329D3ST Produktegenskaper
Delnummer :
HUF75329D3ST
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 55V 20A DPAK
Serie :
UltraFET™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
55V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
26 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
65nC @ 20V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1060pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
128W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
TO-252AA
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
Siste nytt
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