TK35N65W,S1F Priser (USD) [13079stk Lager]
- 1 pcs$3.46831
- 30 pcs$2.84222
- 120 pcs$2.56491
- 510 pcs$2.14898
- 1,020 pcs$1.87170
- Delnummer:
- TK35N65W,S1F
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 650V 35A TO-247.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - likerettere - singel, Transistorer - Bipolar (BJT) - Singel, Tyristorer - DIAC, SIDAC, Power Driver-moduler, Dioder - Zener - Singel, Transistorer - IGBT-er - Arrays, Transistorer - FET, MOSFET - En and Transistorer - Bipolar (BJT) - RF ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK35N65W,S1F electronic components. TK35N65W,S1F can be shipped within 24 hours after order. If you have any demands for TK35N65W,S1F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK35N65W,S1F Produktegenskaper
Delnummer :
TK35N65W,S1F
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 650V 35A TO-247
Serie :
DTMOSIV
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
80 mOhm @ 17.5A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 2.1mA
Gate Lading (Qg) (Max) @ Vgs :
100nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 300V
FET-funksjon :
-
Effektdissipasjon (maks) :
270W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-247
Pakke / sak :
TO-247-3
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