DMT10H015LK3-13 Priser (USD) [167961stk Lager]
- 1 pcs$0.22021
- 2,500 pcs$0.19490
- Delnummer:
- DMT10H015LK3-13
- Produsent:
- Diodes Incorporated
- Detaljert beskrivelse:
- MOSFET N-CHANNEL 100V 50A TO252.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR, Dioder - Zener - Arrays, Transistorer - FET, MOSFET - RF, Transistorer - FET, MOSFET - Arrays, Dioder - likerettere - singel, Transistorer - IGBT-er - singel, Transistorer - programmerbar enhet and Transistorer - Bipolar (BJT) - Singel ...
- Konkurransefordel:
- We specialize in Diodes Incorporated DMT10H015LK3-13 electronic components. DMT10H015LK3-13 can be shipped within 24 hours after order. If you have any demands for DMT10H015LK3-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT10H015LK3-13 Produktegenskaper
Delnummer :
DMT10H015LK3-13
Produsent :
Diodes Incorporated
Beskrivelse :
MOSFET N-CHANNEL 100V 50A TO252
Serie :
Automotive, AEC-Q101
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, vgs :
15 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
33.3nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1871pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.9W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
TO-252, (D-Pak)
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
Siste nytt
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