IRLI640GPBF Priser (USD) [26568stk Lager]
- 1 pcs$1.39702
- 10 pcs$1.24718
- 100 pcs$0.97016
- 500 pcs$0.78559
- 1,000 pcs$0.66255
- Delnummer:
- IRLI640GPBF
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 200V 9.9A TO220FP.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - RF, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Arrays, Dioder - Variabel kapasitet (Varicaps, Varactors), Dioder - Zener - Arrays, Transistorer - programmerbar enhet, Power Driver-moduler and Transistorer - JFET-er ...
- Konkurransefordel:
- We specialize in Vishay Siliconix IRLI640GPBF electronic components. IRLI640GPBF can be shipped within 24 hours after order. If you have any demands for IRLI640GPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLI640GPBF Produktegenskaper
Delnummer :
IRLI640GPBF
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 200V 9.9A TO220FP
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4V, 5V
Rds On (Max) @ Id, vgs :
180 mOhm @ 5.9A, 5V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
66nC @ 10V
Vgs (maks) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
40W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220-3
Pakke / sak :
TO-220-3 Full Pack, Isolated Tab
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