IRFI630GPBF Priser (USD) [34895stk Lager]
- 1 pcs$1.00762
- 10 pcs$0.91062
- 100 pcs$0.73159
- 500 pcs$0.56903
- 1,000 pcs$0.47148
- Delnummer:
- IRFI630GPBF
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 200V 5.9A TO220FP.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Dioder - Zener - Singel, Transistorer - FET, MOSFET - Arrays, Transistorer - programmerbar enhet, Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - RF and Transistorer - spesialformål ...
- Konkurransefordel:
- We specialize in Vishay Siliconix IRFI630GPBF electronic components. IRFI630GPBF can be shipped within 24 hours after order. If you have any demands for IRFI630GPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFI630GPBF Produktegenskaper
Delnummer :
IRFI630GPBF
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 200V 5.9A TO220FP
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
400 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
43nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
800pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
35W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220-3
Pakke / sak :
TO-220-3 Full Pack, Isolated Tab
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