Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 650V 5.2A TO-220SIS
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1.2 Ohm @ 2.6A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 170µA
Gate Lading (Qg) (Max) @ Vgs :
10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
380pF @ 300V
Effektdissipasjon (maks) :
30W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220SIS
Pakke / sak :
TO-220-3 Full Pack