Infineon Technologies - BAL99E6327HTSA1

KEY Part #: K6458674

BAL99E6327HTSA1 Priser (USD) [4027624stk Lager]

  • 1 pcs$0.01373
  • 3,000 pcs$0.01366

Delnummer:
BAL99E6327HTSA1
Produsent:
Infineon Technologies
Detaljert beskrivelse:
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR-er - moduler, Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - Singel, Tyristorer - DIAC, SIDAC, Dioder - likerettere - matriser, Transistorer - Bipolar (BJT) - Arrays, Power Driver-moduler and Transistorer - FET, MOSFET - Arrays ...
Konkurransefordel:
We specialize in Infineon Technologies BAL99E6327HTSA1 electronic components. BAL99E6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BAL99E6327HTSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAL99E6327HTSA1 Produktegenskaper

Delnummer : BAL99E6327HTSA1
Produsent : Infineon Technologies
Beskrivelse : DIODE GEN PURP 80V 250MA SOT23-3
Serie : -
Delstatus : Last Time Buy
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 80V
Nåværende - Gjennomsnittlig rettet (Io) : 250mA (DC)
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.25V @ 150mA
Hastighet : Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 4ns
Nåværende - Omvendt lekkasje @ Vr : 1µA @ 70V
Capacitance @ Vr, F : 1.5pF @ 0V, 1MHz
Monteringstype : Surface Mount
Pakke / sak : TO-236-3, SC-59, SOT-23-3
Leverandørenhetspakke : SOT-23-3
Driftstemperatur - veikryss : -65°C ~ 150°C

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