Toshiba Semiconductor and Storage - RN1105MFV,L3F

KEY Part #: K6526919

RN1105MFV,L3F Priser (USD) [4559stk Lager]

  • 8,000 pcs$0.01146
  • 16,000 pcs$0.00997
  • 24,000 pcs$0.00897
  • 56,000 pcs$0.00797
  • 200,000 pcs$0.00664

Delnummer:
RN1105MFV,L3F
Produsent:
Toshiba Semiconductor and Storage
Detaljert beskrivelse:
TRANS PREBIAS NPN 0.15W VESM.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Tyristorer - DIAC, SIDAC, Tyristorer - SCR, Dioder - RF, Transistorer - FET, MOSFET - Arrays and Transistorer - FET, MOSFET - En ...
Konkurransefordel:
We specialize in Toshiba Semiconductor and Storage RN1105MFV,L3F electronic components. RN1105MFV,L3F can be shipped within 24 hours after order. If you have any demands for RN1105MFV,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN1105MFV,L3F Produktegenskaper

Delnummer : RN1105MFV,L3F
Produsent : Toshiba Semiconductor and Storage
Beskrivelse : TRANS PREBIAS NPN 0.15W VESM
Serie : -
Delstatus : Active
Transistortype : NPN - Pre-Biased
Nåværende - Samler (Ic) (Maks) : 100mA
Spenning - Samlebrenningens nedbrytning (maks) : 50V
Motstand - base (R1) : 2.2 kOhms
Motstand - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
Nåværende - Collector Cutoff (Max) : 500nA
Frekvens - overgang : -
Kraft - Maks : 150mW
Monteringstype : Surface Mount
Pakke / sak : SOT-723
Leverandørenhetspakke : VESM

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