Produsent :
Taiwan Semiconductor Corporation
Beskrivelse :
650V 4A SINGLE N-CHANNEL POWER M
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
2.6 Ohm @ 1.2A, 10V
Vgs (th) (Max) @ Id :
3.8V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
16.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
596pF @ 50V
Effektdissipasjon (maks) :
41.6W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
ITO-220
Pakke / sak :
TO-220-3 Full Pack, Isolated Tab