NVD5117PLT4G-VF01 Priser (USD) [72890stk Lager]
- 1 pcs$0.53644
- 2,500 pcs$0.39662
- Delnummer:
- NVD5117PLT4G-VF01
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET P-CH 60V 61A DPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - moduler, Dioder - likerettere - singel, Dioder - Bridge likerettere, Transistorer - FET, MOSFET - Arrays, Power Driver-moduler, Dioder - Zener - Singel, Transistorer - programmerbar enhet and Transistorer - Bipolar (BJT) - Singel ...
- Konkurransefordel:
- We specialize in ON Semiconductor NVD5117PLT4G-VF01 electronic components. NVD5117PLT4G-VF01 can be shipped within 24 hours after order. If you have any demands for NVD5117PLT4G-VF01, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVD5117PLT4G-VF01 Produktegenskaper
Delnummer :
NVD5117PLT4G-VF01
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET P-CH 60V 61A DPAK
Serie :
-
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
11A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
16 mOhm @ 29A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
85nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
4.1W (Ta), 118W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
DPAK
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
Siste nytt
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