FQI7N80TU Priser (USD) [72314stk Lager]
- 1 pcs$0.54340
- 1,000 pcs$0.54070
- Delnummer:
- FQI7N80TU
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 800V 6.6A I2PAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - Arrays, Transistorer - FET, MOSFET - En, Transistorer - JFET-er, Power Driver-moduler, Dioder - Zener - Arrays, Transistorer - IGBT-er - moduler, Dioder - Zener - Singel and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurransefordel:
- We specialize in ON Semiconductor FQI7N80TU electronic components. FQI7N80TU can be shipped within 24 hours after order. If you have any demands for FQI7N80TU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQI7N80TU Produktegenskaper
Delnummer :
FQI7N80TU
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 800V 6.6A I2PAK
Serie :
QFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1.5 Ohm @ 3.3A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
52nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1850pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
3.13W (Ta), 167W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
I2PAK (TO-262)
Pakke / sak :
TO-262-3 Long Leads, I²Pak, TO-262AA
Siste nytt
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