Delnummer :
IPB083N10N3GATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 100V 80A TO263-3
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, vgs :
8.3 mOhm @ 73A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 75µA
Gate Lading (Qg) (Max) @ Vgs :
55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3980pF @ 50V
Effektdissipasjon (maks) :
125W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D²PAK (TO-263AB)
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB