BSM50GD120DN2E3226BOSA1 Priser (USD) [695stk Lager]
- 1 pcs$66.82368
- Delnummer:
- BSM50GD120DN2E3226BOSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- IGBT 2 LOW POWER ECONO2-2.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Singel, Tyristorer - TRIAC, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - Bipolar (BJT) - Arrays, Transistorer - FET, MOSFET - En, Tyristorer - SCR-er - moduler and Transistorer - Bipolar (BJT) - RF ...
- Konkurransefordel:
- We specialize in Infineon Technologies BSM50GD120DN2E3226BOSA1 electronic components. BSM50GD120DN2E3226BOSA1 can be shipped within 24 hours after order. If you have any demands for BSM50GD120DN2E3226BOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM50GD120DN2E3226BOSA1 Produktegenskaper
Delnummer :
BSM50GD120DN2E3226BOSA1
Produsent :
Infineon Technologies
Beskrivelse :
IGBT 2 LOW POWER ECONO2-2
Serie :
-
Delstatus :
Not For New Designs
IGBT-type :
-
konfigurasjon :
Three Phase Inverter
Spenning - Samlebrenningens nedbrytning (maks) :
1200V
Nåværende - Samler (Ic) (Maks) :
50A
Kraft - Maks :
350W
Vce (på) (Max) @ Vge, Ic :
3V @ 15V, 50A
Nåværende - Collector Cutoff (Max) :
1mA
Input Capacitance (Cies) @ Vce :
3.3nF @ 25V
Input :
Standard
NTC Thermistor :
No
Driftstemperatur :
150°C (TJ)
Monteringstype :
Chassis Mount
Pakke / sak :
Module
Leverandørenhetspakke :
Module
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