RFN1LAM6STR Priser (USD) [1067595stk Lager]
- 1 pcs$0.03830
- 3,000 pcs$0.03811
- 6,000 pcs$0.03430
- 15,000 pcs$0.03049
- 30,000 pcs$0.02858
- 75,000 pcs$0.02534
- Delnummer:
- RFN1LAM6STR
- Produsent:
- Rohm Semiconductor
- Detaljert beskrivelse:
- DIODE GEN PURP 600V 800MA PMDTM. Diodes - General Purpose, Power, Switching 700V Vr 0.8A Io Fast Recovery Diode
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - En, Transistorer - IGBT-er - moduler, Tyristorer - SCR, Transistorer - IGBT-er - singel, Transistorer - FET, MOSFET - Arrays, Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - Arrays and Tyristorer - SCR-er - moduler ...
- Konkurransefordel:
- We specialize in Rohm Semiconductor RFN1LAM6STR electronic components. RFN1LAM6STR can be shipped within 24 hours after order. If you have any demands for RFN1LAM6STR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RFN1LAM6STR Produktegenskaper
Delnummer :
RFN1LAM6STR
Produsent :
Rohm Semiconductor
Beskrivelse :
DIODE GEN PURP 600V 800MA PMDTM
Serie :
-
Delstatus :
Active
Diodetype :
Standard
Spenning - DC Reverse (Vr) (Max) :
600V
Nåværende - Gjennomsnittlig rettet (Io) :
800mA
Spenning - Fremover (Vf) (Maks) @ Hvis :
1.45V @ 800mA
Hastighet :
Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) :
35ns
Nåværende - Omvendt lekkasje @ Vr :
1µA @ 600V
Capacitance @ Vr, F :
-
Monteringstype :
Surface Mount
Pakke / sak :
SOD-128
Leverandørenhetspakke :
PMDTM
Driftstemperatur - veikryss :
150°C (Max)
Siste nytt
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