IPP086N10N3GXKSA1 Priser (USD) [50552stk Lager]
- 1 pcs$0.79021
- 10 pcs$0.70157
- 100 pcs$0.55436
- 500 pcs$0.42992
- 1,000 pcs$0.32107
- Delnummer:
- IPP086N10N3GXKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 100V 80A TO220-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Transistorer - spesialformål, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - JFET-er, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - IGBT-er - Arrays and Tyristorer - SCR ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPP086N10N3GXKSA1 electronic components. IPP086N10N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPP086N10N3GXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP086N10N3GXKSA1 Produktegenskaper
Delnummer :
IPP086N10N3GXKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 100V 80A TO220-3
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, vgs :
8.6 mOhm @ 73A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 75µA
Gate Lading (Qg) (Max) @ Vgs :
55nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3980pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
125W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO220-3
Pakke / sak :
TO-220-3
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