Comchip Technology - CDBJFSC5650-G

KEY Part #: K6441904

CDBJFSC5650-G Priser (USD) [29974stk Lager]

  • 1 pcs$1.37498

Delnummer:
CDBJFSC5650-G
Produsent:
Comchip Technology
Detaljert beskrivelse:
DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 5A 650V
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - RF, Transistorer - Bipolar (BJT) - Singel, Transistorer - spesialformål, Transistorer - Bipolar (BJT) - Arrays, Dioder - Zener - Singel and Dioder - RF ...
Konkurransefordel:
We specialize in Comchip Technology CDBJFSC5650-G electronic components. CDBJFSC5650-G can be shipped within 24 hours after order. If you have any demands for CDBJFSC5650-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CDBJFSC5650-G Produktegenskaper

Delnummer : CDBJFSC5650-G
Produsent : Comchip Technology
Beskrivelse : DIODE SILICON CARBIDE POWER SCHO
Serie : -
Delstatus : Active
Diodetype : Silicon Carbide Schottky
Spenning - DC Reverse (Vr) (Max) : 650V
Nåværende - Gjennomsnittlig rettet (Io) : 5A (DC)
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.7V @ 5A
Hastighet : No Recovery Time > 500mA (Io)
Omvendt gjenopprettingstid (trr) : 0ns
Nåværende - Omvendt lekkasje @ Vr : 100µA @ 650V
Capacitance @ Vr, F : 430pF @ 0V, 1MHz
Monteringstype : Through Hole
Pakke / sak : TO-220-2 Full Pack
Leverandørenhetspakke : TO-220F
Driftstemperatur - veikryss : -55°C ~ 175°C

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