IPL60R2K1C6SATMA1 Priser (USD) [2911stk Lager]
- 5,000 pcs$0.13749
- Delnummer:
- IPL60R2K1C6SATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 8TSON.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - Singel, Dioder - likerettere - singel, Transistorer - Bipolar (BJT) - Arrays, Dioder - likerettere - matriser, Transistorer - programmerbar enhet, Dioder - Bridge likerettere and Transistorer - FET, MOSFET - En ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPL60R2K1C6SATMA1 electronic components. IPL60R2K1C6SATMA1 can be shipped within 24 hours after order. If you have any demands for IPL60R2K1C6SATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPL60R2K1C6SATMA1 Produktegenskaper
Delnummer :
IPL60R2K1C6SATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 8TSON
Serie :
CoolMOS™ C6
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
2.1 Ohm @ 760mA, 10V
Vgs (th) (Max) @ Id :
3.5V @ 60µA
Gate Lading (Qg) (Max) @ Vgs :
6.7nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
140pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
21.6W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
Thin-PAK (5x6)
Pakke / sak :
8-PowerTDFN
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